unisonic technologies co., ltd ut2308 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2010 unisonic technologies co., ltd qw-r502-128.d n-channel enhancement mode ? description the utc ut2308 is n-channel power mosfet, designed with high density cell, with fast switching speed, ultra low on-resistance and excellent thermal and electrical capabilities. used in commercial and industrial surface mount applications and suited for low vo ltage applications such as dc/dc converters. ? symbol 2.gate 1.source 3.drain ? ordering information ordering number pin assignment lead free halogen free package 12 3 packing UT2308L-AE3-R ut2308g-ae3-r sot-23 s g d tape reel ? marking 23g l: lead free g: halogen free
ut2308 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-128.d ? absolute maximum ratings (ta = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 20 v gate-source voltage v gss 10 v continuous drain current i d 2.7 a power dissipation p d 1.25 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (ta =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =250 a 20 v drain-source leakage current i dss v ds =20 v, v gs =0 v 1.0 a gate-source leakage current i gss v ds =0 v, v gs = 10v 100 na on characteristics gate-threshold voltage v gs(th) v ds =v gs , i d =250 a 0.4 0.8 1.0 v v gs =4.5 v, i d =1a 80 m ? static drain-source on-state resistance (note2) r ds(on) v gs =2.5 v, i d =1a 110 m ? dynamic parameters input capacitance c iss 215 pf output capacitance c oss 65 pf reverse transfer capacitance c rss 45 pf switching characteristics total gate charge q g 3.8 nc gate source charge q gs 0.7 nc gate-drain charge q gd v gs =4.5v 0.9 nc note:1. pulse width limited by t j(max) 2. pulse width 300 s, duty cycle 2%. 3. surface mounted on fr4 board t 5 sec.
ut2308 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-128.d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
|
